Ferroelectric non-volatile memory 'FeRAM'
High-quality, highly reliable memory with a rich track record of mass production.
FeRAM (Ferroelectric Random Access Memory) is a non-volatile memory with the characteristics of high-speed operation. It does not require battery backup for data retention and has advantages in terms of high-speed writing, high rewrite endurance, and low power consumption compared to other non-volatile memories such as EEPROM and flash memory. [Features] - Non-volatile: No battery backup required - High-speed writing: No erase operation required - High rewrite endurance: Guaranteed for 10 trillion cycles (with some exceptions) *For more details, please download the PDF or feel free to contact us.
- Company：RAMXEED （旧：富士通セミコンダクターメモリソリューション株式会社 2025/1/1に社名変更しました）
- Price：Other
